PUBBLICAZIONI
M. Cuscunà, L. Mariucci, G. Fortunato, A. Bonfiglietti, A. Pecora and A. Valletta “Improved electrical stability in asymmetric fingered polysilicon thin film transistors”
Thin Solid Films 487 (2005) 237-241.
A. Pecora, L. Maiolo, A. Bonfiglietti, M. Cuscunà, F. Mecarini, L. Mariucci, G. Fortunato and N. D. Young
“Silicon dioxide deposited by ECR-PECVD for low-temperature Si devices processing”
Microelectronics reliability 45, pp. 879-882 (2005).
L. Mariucci, G. Fortunato, A. Bonfiglietti, M. Cuscunà, A. Pecora and A. Valletta “Polysilicon TFT Structures for Kink-Effect Suppression”
IEEE Trans. on El. Dev., vol. 51, pp. 1135-1142 (2004).
G. Fortunato, M. Cuscunà, L. Mariucci, A. Bonfiglietti, A. Pecora and A. Valletta
“Asymmetric fingered TFT structure: a new architecture for kink effect and off-current suppression and improved stability”
Accepted to Journal of the Korean Physical Society.
M. Cuscunà, G. Stracci, A. Bonfiglietti, A. di Gaspare, L. Maiolo, A. Pecora, L. Mariucci and G. Fortunato
“Annealing temperature effects on the electrical characteristics of p-channel polysilicon thin film transistors”