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Full-range high-frequency high-efficiency class D/sup 2/ resonant power supplyProceedings of IECON'94 - 20th Annual Conference of IEEE Industrial Electronics

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(1)

Off-Line Full-Range High-Frequency High-Efficiency

Class

D2

Resonant

Power Supply

M. Bartor, A. Reatti', Member, IEEE,

and

M.

K.

Kazimierc&*, Senior Member, IEEE

*University

of Florence, Department of Electronic Engineering,

Via di S.

Marta,

3,50139

Florence

-

Italy

Phone:

(39)(55)47%-389

and

Fax:

(39)(55)494569;

E

-

Mail:

CIRCUITI@VM.IDG.CNR.FI

Wright

State University, Department of Electrical Engineering, Dayton, Ohio

45435,

USA

**

Phone:

(513)873-5059

and

Fax:

(513)873-5009;

E

-Mail:

MKAZIM@VALHALLACS.WRIGHT.

EDU

Abstmcf

-

A fidl-range off-line power supply based on a class I? dc-dc parallel resonant converter is presented in this paper. The class D inverter is operated above the resonant frpquency to produce

a

zero voltage turwn of the MOSFETs. Turn-off losses are drastically reduced by using only one capacitor connected in parallel to one of the two MOSFETs of the inverter. As a result, switching losses are nearly zero and a fulcload, low line high+fficiency

L =

86% is achieved at an operating frequency of about 500 kHz including the front-end rectifier. The optput voltage V, = 12 V is regulated over the entire load range, that is, for an output current I , ranging from

0.25 A to 2.5 A and for both American and European standard input voltages in a narrow frequency range, from

fk=290kHz to f,,=490 kEfi. Other advantages of the power supply are its inherently short-circuit protected operation, the low di/rdt at the MOSF'ET turn-off that allows the parasitic

MOSFET

diodes to be used, and the low conduction losses

in

ESR

of the rectifier fdter capacitor.

I. INIRODUCITON

In last years, designers have been

trying

to increase the converter switchmg frequency to achieve volume and weight reduction. This results in small transfmers, filter chokes, and filter capacitors. Resonant dc-dc converters represent the most promising solution to the problem of high power-demity power supplies and noise level reduction. They are collstituted of a resonant inverter and a rectifier coupled with a transfomer that provides the galvanic insulation between the iugh voltage input and the low voltage output and the proper voltage transfer function by means of its turns ratio n. The reduction of switchmg losses makes

them suitable for a high-frequency operation.

Main

limitations of some resonant converters are high peak currents in the inverter section and high reverse voltage across power transistors; e.g. in the class E inverter the maximum reverse voltage may be four times

higher than the dc input voltage VDD [I-31. Class D resonant inverters have a low voltage stress on power transistors, equal to VDD For this reason, they

can

be used for applications in off-line power supplies, where the rectified dc input voltage is htgh, e.g., VnD=

f i

X220 X 1 . 2 =370 V in Europe . Moreover, low cost power transistors with a low RON and low parasitic capacitances can be used and both conduction and switching losses are reduced.

Other papers [4-6] show resonant dc-dc converters operated below the resonant frequency. However, this operation requires fast

external antiparallel diodes in the invertex circuit. Moreover, only turn-off losses are eliminated. The power lost at the turn-011 is simply transferred to external snubber circuits. Practically, spikes in the switch current waveforms are present at both the --on and turn-off.

The purpose of this paper is to present a power supply that operates over a wide-load and line range,

I,=

0.25

-

2.5 A and VDD = 100

-

370 V, which corresponds to line ac voltage from 75 to 275

,

,

V

. Therefore, the circuit is called a full-range power supply. The power supply is composed of a parallel class

Dz

dcdc

resonant converter

[7],

where

switchmg

losses are drastically red& and, therefore, the converter is suitable for a high switchmg frequency

v,,

= 480 kHz) operation.

The sip!kance of the paper is that the power supply operates with a high-efficiency operation with a low number of easily available components and, therefore, represents a satisfactory solution to

the need of low-cost and high power-density power

supplies.

Other advantages of the presented power supply are as follows: The turn off losses are almost zero over the entire load range because the current in the inverter is almost load independent. It is inerhently protected against load short circuit.

a safe no-load topology is achieved if the switchmg frequency is kept close to the resonant frequency.

Parasitic components, as such as MOSFET parasitic diodes and capacitances, are absorbed in the circuit operation.

Low number of currently available devices can be used in assembhg the power supply so that both the high power- density and low-cost requirements are satisfied.

II.

PRINCIPLE OF OPERATION

The converter circuit is obtained with a parallel resonant inverter and a class D voltagexiriven center-tapped rectifier [7,8] with one capacitor

in parallel with

only one power MOSFET, as

shown in Fig. I. This provides reduction of the turn-on losses in both MOSFETs. The parallel resonant inverter circuit is better

than

the series resonant [ 1 1,15,16]

because

it is able to regulate the dc output voltage Voover a wide load range, e.g., &om 10

YO

to 110 %

of the nominal output current as normally required fkpm design specifications. Moreover, it has an efficiency which increases with output current. The parallel class D inverter has is chosen

because

the series-padlel class D inverter has a lower full-load efficiency [10,15,16]. The circuit is operated at the continuous current mode

(2)

FUSE

* -

Fig. 2. Waveforms of class D inverter for

f

> fo with shunt capacitor C,.

above the resonant fkequency

f,

over the enhre load and input voltage ranges. The principle of operation of class D inverter is explained by the waveforms shown in Fig. 2: the current in the resonant circuit is hqggmg the voltage applied across the switches (that is, the hdamental harmonic of the square wave applied). As

Fig. 1. Class D parallel resonant power supply.

a result, turn on s w i t c h losses are eliminated because the MOSFET body-drain diodes conduct the inverse current and the voltages

vDSl

and

vDS2

are zero before the MOSFETs cany the forward currents (time interval t , - t2 ). Moreover, diodes tum on at

a very low dudt, not generating current spikes, and the conducting diodes have a turn off time equal to the forward conduction time of the MOSFETs. So the flyback diodes can be slow and no external diodes are required. The parallel capacitor C, forces the reverse voltage across both of the MOSFETs to slowly increase during their turn4ff [8]. As a result, turn-off losses are drastically reduced.

For operation above resonance (f >

f,),

MOSFET Q, conducts during the time interval tz - r3 , MOSFET Qz is OFF and the voltage

vDs2,

which is also the voltage across C, , is equal to the dc input VDD. From time t3 to t4 , the gate-to-source voltage turns Q,

off

and

Q2 is still off because of the dead time to. After time t4, the current of the resonant circuit is diverted from Q, to the shunt capacitor C, , the voltage

vDS2

decreases according to i, = dvDs /dt, and

vDS,

is

forced to increase fkom zero to VDD. As a result,

vDs,

slowly increases and crosses the decreasing current at almost zero level.

After

half a period, the voltage and current waveforms of Qz have

the same waveforms of those of Q,; therefore, Q, turns on with zero power loss and turn-off loss is also reduced for Qz.

III. DESIGNEXAMPLE

An off-line power supply was designed to meet the following Specifications:

1) output power Po = 24 W at an output voltage Vo = 12 V, 2) input dc voltage VDD ranging

from

100 V to 370 V, that is, an ac

3)&= 300kHz.

Using the results of previous analysis (71 and wing a loaded quality factor Q = 3, a class D inverter efficiency h, = 0.9, a

diode

forward drop VF = 0.5 V, a diode series resistance

RF

= 0.03 W, and a transformer winding resistance rF = 0.1 W, the design procedure is as follows. The dc load resistance is

rms voltage in the 80-240 V range,

The dot& Voltage transfer function for the center-tapped rectifier is

(3)

,

-

where n is

the

tnmsfonner

tums ratio. The equivalent input

resi&mx seenattheterminalsoftheprimarywindingis

RR =RL

-

n2d

8

(

I

+?

:

)

=7.87n2

U . (3)

E a mini” Operating fkequeq f = 1.051 is assumed at

full

power, the dc-to-ac voltage transfe!r fuuctim results

The rectifier efficiacy at

full

power is

The & b d c voltage tnlnsfer limction

of the mverter

is

(4)

which leads to n = 8.17. By choosmg n = 9, we

obtain

MI- = 3.01, M,2- = 0.79,

and

thtmfiixe, the mari“

fiequedcy fa load reguhtlm

is

The c ” n t

values

of the reSanant circuit are

calculated

as follows

L =112@.

(9)

eni ice

the charecteistic rmpedt~lce

is Z, =&jF=2110. he ~ ~ c u r r e n t t h r o u g h i n d u c t o a Latmloadoperationgladat

maxi“ input voltage Vm = 370 Y is addated as

l‘he efficiency of the Class D parallel resonant inverter

operrded

at

full

load with an input voltage VDD= 100

Vis

is

the total equivalent parasitic

mktance

of

a class

D

pardel the two MOSFETs when ON, rr

is the equivalent series resistance

(ESR) of the Tes(Hlltnt hductar L,

r-is

the

ESR of the rescnmt capacitor C,

and

r- is

the

ESR ofthe blochng

capecitaa

C,.

resmmt inverter, ‘,,,,and ‘=are the

ctrain-to-source resistances

of

Abreadboerdofthecanverterwasbui€tandtested, usingtwo Iut”ti0nal

Rectifier

IFS740 MOSFETs, Motorola MBR4035CT sEhottkydiodes,Cp=1.5nF,L= 1lOmH,C=3.9nF,CB= lmF, L m = 3 5 m H , a n d c m = 3 0 0 n F . T h e “ d r e s c l n r m t

firequency was

f,

= 251

kHz.

The driver voltages with a d . . l e ~ t i m e o f 2 5 0 n s w a e ~ ~ ~ u s i n g a U n i t r o d e U 1 % 2 5 I C . Thesrpermental results were “ed

as

functions

of

the load

and

input voltage at a

fixed

uutput voltage Vo=12V.

The

“Ioutput power WBS varied

fi”

P-=2.5 W to

P-= 33 Wandthe “g

tkpencyvrniedfi”280kHzat

VDD = 100 V

and

I, = 2.8 A to 480

kHz

at VDD=370 V

and

I, = 0.2 A. Fig. 3 shows the efficiency of the convertex as a h d i o n of the output current for two values of the ac input voltage voltage and current w a v d i of

the

bottom MOSFET

at

VDD = 141 V and

VDD= 333 Vat a COIlstant

output

re&ance4=4.7

W.

The output

voltage WBS regulated overthe entire input voltage q with a

nat~ow 6quency Variation

fi”

294 kHz to 381 kHz. Fig. 6 zooms

current i,Cross each

otha

at ahnost z e f ~ values, resulting in nearly zero turn+ff loss of the MOSF’ET.

v,,

= 100

v

and

vr,

= 235

vat

v,

= 12

v.

Figs.4

and

5 show the

(4)

901

I

rl 85 70 65 60 0.5 1 1.5 2 2.5 3

(4

IO

Fig. 3. Converter efficiency versus output current.

. , .. .. I I (

-i

: '

..I

I I i . li - \ : ri i I ' I vm I

1

. . . I . . . .. ... ... . . .

;

.... : ... 4 . . . . . . . I : I . I 0

-L!

. . . . , I I . I .. .. .. . " .... : _ . . . :

,

! I . . . . . . I . . ' I I

Fig. 4. Waveforms of voltage

vm

and curreat ix2 at an Operatiag fkquencyf= 294

IrHz,

ac input voltage

VI-

= 100 V, out-

put voltage Vo= 12 V,

and

RL=

4.7 U

(&

= 2.5 A). Vertical: 40 V/div. for

vm2

and

1 Ndiv. for

isl;

horizontal: 1 pddiv.

I . . . . . . . . . . ,FT, .... ,/- ! w---& . .. .... .

-

' ' '.' 8 1 ; . .

Fig. 5. Waveforms of voltage

vm

and current is, at an operathg

fresuency

f

= 382 kHz, ac input voltage VI-= 235 V,

output

voltage Vo = 12 V, and

RL

= 4.7 U ( Io = 2.5 A ). Vertical: 185 V/div. for

vmand

1 Ndiv for is2;

horizontal:

500 d d i v .

Fig. 6. Detail of voltage

van

and current at the turn-off of the

MOSFET

a.

Operating conditions are the same as in Fig. 4. Vertical: 185 V/div. for vaa and 1 Aldiv. for

is;

harizontal: 500 pSJdiv.

Fig. 7 shows the current wavefonn tbrough the Primary windug of the transfmer and the output voltage ripple vr The current was a square wave as expected,

and

the

peak-to-peak

voltage ripple was as low as 100 mV, which is less than 1% of the output voltagc.

I

i

... ..: ... ._ ....

_.

... ...: ... ; .... .1. _. ... .: ....

. . .

I : : . .

I : : . .

Fig. 7. Wavefanns of the current l p through the primary Winding of

the transformer and the output voltage

ripple v,. at an op

era@

frequency

f

= 386

kHz, ac

input

voltage

VI,,,,,

= 235 V

(VDD=

235 V), output voltage

Vo

= 12 V,

and

RL

= 4.7 0

(ro

= 2.5 A). Vertical: 500 d d i v . for

i,

and

lOomV/div. for

v,

; horizontal: 500 d d i v .

REFERENCES

K"ierczulc, M. K. and X.T. Bui, "A family of class E resonant dc-dc power convaters",

P m .

16th Intern. PCI '88 C m t (S41"ECH '88), Dearborn, MI, October 3-6,1988, pp.383-394.

Kazimiercfllk,

M.

K. and K. Puczko,

"

P o w ~ - o u t p ~ t capability of class E amplifier at any loaded Q and switch duty cycle", LEEE Tmns. Circuits Syst.., vol CAS-36, pp. 1142-1144,August 1989.

(5)

PI

r131

Ka")r

M.

K.

and

K. Puczko,

"

Power-ootpnt

capability

of class E q W e r at any loaded

Q

and

switch

duty cycle",

lliEE

Tmns. Circtdts Syst.,

vol CAS-36, pp-

J. JaewilrandUK.

ICazimiemnk,

"Amlyas

and

design

of

Class

E2

dc-dc

converter",

IEEE

Tmns. I d . Electmn., vol

K. S c e ,"A new iugh tkquemy resonant converter topbgy", Piuc. High F-.

Poww

C o "

CmJ,

pp.390403,

May 1988,

San

Diego, CA.

Watt

parallel " m t c a v e (PRC) atilizing

an

RF

t

"

,

High

F h p n c y

Poww Carvsrsiar

Cmf-e, pp. 446-466, May 1988,

San

Diego, CA. R. Myas andR.D. peclr, r00-KX-k

Power

FET Tdmology Jeumol, pp.

3-10,

August 1981.

Kazimiaczulr,

M.

K.,

Szaraniec,

W.,

and

Wan&

S.,

Q",

lEEE

Tnap. Aerospace Eltxttvn. Syst.,

Vol. 28,

No.

1, Kazimiemulc, M. K.

and

W.

Szataniec, "Class

zeru-voltap

h t Elect. E a . ,

Pt.

B, Elm. Power Appl.,

vol. 139,

Nov.

1992.

U

K.

Kazimiaenk, "Class D currentdriven r e z t i k s fix Mdc convertex applications", 5 Tnap.

W.

Eltxt?vn.,

vol. E-38,

pp. 344-354, Nov.

1991.

Ka"z& U K.,

Thinmamyan,

N.,

and Wan&

S.,

"Anatysis

of sfaies

p8ranel resrmant c a m " ,

lEEE

. .

1142-1

144,

A m

1989.

E-37,

w.173-183,

A@

1990.

S.L.

Smith and

S.

R- "An

off-line,

e

M € k

350-

in

N ~ w

Modalar

POW S & i d , Hetvlett-Pa&d

"~anddesignofpataueIresonantccmveaterathigh J w

1m,

pp. 35-50.

switching

inverter

with

d y

om shcmt

arpacitcrr,

Piuc.

. .

T-. Aewxpace Electtvn. Syst..,

Vol. 29,

NO.

1, Jan~ary

1993,

pp. 88-99.

R

J. King and T. A. Stoart, "A *- Amdel for

the

half-bpidge

Series

resonant c o n e ,

IEE6

T n a ~ . AempaceElartmn. Syst.., vol. -17, pp. 190.198,

Mar.

1981.

V.

VorpQLan and S.

crh, "A

aanplete dc

analysis ofthe

Series

resonant

converter",

in

5

Power E l e t ~ m .

Spacialists COSJ: R e . , Cmhidge,

MA,

June

1447,1982.

Ka"lrUK.andWang,S.,

"F"yQtnain

a n a l y s i s o f s a i e s c 4 m v e r t e r f o r ~ M m mode*, 5 T m w .

Poww

E h t " ,

Vol.

7,

No.

2,

A p d

1992,pp.

270-279.

R

L.

Steigawald,

''High-- "tbransistor

dodc

~ v W , 5

T-.

P mE l e c h , p ~ .

181-191,

May

1984.

R. L.

Stagawald, "A am@sm of

helf-bridge

converter topologies",

IE66

Tmns. Power Eltxttvn., vol.

PE-3, pp. 174182, Apr.

1988.

M.

K.

and

W.

Surraniec, "Elctronic ballast

for hmscent h p f ,

IL266

T m w . Poww

E h t " ,

Vol.

pp. 85-100.

. .

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