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Stability Tests on SiPM for the new MEG TC

For the MEG Timing Counter upgrade, the light detectors are SiPM, may be in a parallel configuration in order to reduce channels number.

Here I would like to present some tests on Hamamatsu and FBK 3 x 3 mm2 SiPM. In particular breakdown temperature dependance and gain stability measurements: variation as function of bias voltage and temperature.

Meeting MEG PSI July 23-24, 2012

Massimo Rossella – INFN Pavia

Roberto Nardo’, Antonio deBari, Orlando Barnaba, Marco Prata

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Advansid

ASD-SiPM3S-P50

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The test on Hamamatsu devive has been done on a single cell of a 16 channel array as we have not yet received sample of a single cell alone.

Here the main characteristics:

Device Hamamatsu

model S11828-3344M

Pixel size 3 x 3 mm2 Cell Size 50 x 50 mm2 N. of cell/pixel 3600

Breakdown voltage 70 +/- 10V Pixel dark count 6 x 106

Gain 7.5 x 105

Spectral Range 320 To 900 nm

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Measurements

 Here we would like to present tests regarding the stability of SiPM, in particular the gain with the changes of Temperature and of the power supply voltage (or better the overvoltage over the breakdown).

 To do this, we have used a 650nm, 10nsec solid state laser source impinging the SiliconPM by means of a 100mm quartz optical fiber. The quantity of light is modulated by means of neutral density optical filter. The distance of the fiber from the array has been chosen in order to guarantee a uniform illumination of the device.

 The device has been inserted in a climatic chamber where temperature could be varied from ambient to 80 oC beside the chamber temperature regulator, a thermocouple has been posizioned close to the detector and monitor continously the device by means of a digital thermometer.

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Measurements

Roughly temperature has been varied from 25 to 50 oC and mesurements has been done after a stabilization within 0.5

oC .

 I-V measurements has been done automatically by means of a Keithley picoAmmeter that has the possibility to apply a voltage up to 100V with a resolution of 100mV.

 The measurements regarding the Gain has been done

illuminating the device with a fixed and stable number of photons. The peak of the signal has been registered by

means of a digital scope triggered by the laser source pulser.

This has been done as function of temperature and of bias voltage.

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The power supply

The circuit to bias the siliconPM array is very simple with the cathodes short circuited together with 1k quench resistor.

The reading of the signal is made on the anodes

together on a 50Ohm load resistor.

No amplifier has been used, but the direc signal

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Conclusions

 Breakdown voltage temperature sensitivity are similar for the two detector 40mV/oC for Hamamatsu and 65 mV/oC for Advansid (for both less then what is found on

specifications).

 Breakdown voltage are are more than 70V for Hamamatsu and more than 40V for Advansid

 Regarding the gain stability as function of overvoltage, for both the detector it is suggested to work well above the breakdown: 1.5V for Hamamatsu and 3.5V for Advansid:

less that 50%

 Regarding gain stability as function of temperature, working well above the breakdown, with a temperature variation of 20 oC (30 to 50 oC) , gain variation are less than 5% for

Hamamatsu and 10% for Advansid

Riferimenti

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