Riferimenti Bibliografici
[1] P. Arcioni, R Castello, L. Peregrini, E. Sacchi, F. Svelto “An innovative modelization of loss Mechanism in silicon Integrate inductors”
Transactions on circuits and systems vol. 46, no.12, December 1999
[2] D. Lovelance, N. Camilleri, and G. Cannel, “Silicon MMIC inductor modelling for high volume, low cost applications” Microwave J., pp. 60-71,Agoust 1994
[3] J.R. Longand M. A. Copeland “Modeling, characterization and desing of monolithic inductors for silicon RFIC’s” IEEE 1996 Custom Integrated
Circuits Conf., pp. 184-185, 1996.
[4] I. Bahl and P. Bhartia, Microwave Solid State Circuit Desing. New York: Wiley, 1988 sec. 2.4 .
[5] G. E. Ponchak, A. Margomenos, and L. P. B. Katehi, “Low-Loss CPW on Low-Resistivity Si Substrates with a Micromachined Polyimide interface Layer for RFIC Interconnects” IEEE Trans on Microwave Theory and
Techniques, vol 49,no. 5, pp. 866-870m,May 2001.
[6] H.Sakai, et al., “A new millimeter-wave flip-chip IC on Silicon Substrate” in Asia Pacific Microwave Conf. 1994, pp 291-294..
[8] J. Yoon, Y. Choi, B. Kim, Y. Eo, and E. Yoon “CMOS-Compatible surface-micromachined suspended-spiral inducrors for multi-GHz Silicon RF ICs” IEEE Electron Device Letters, vol23, NO. 10, Oct. 2002
[9] Nga Phuong Pham, P. M. Sarro, K. T. Ng and J. N. Burghartz
“IC-compatible two-level bulk micromachining process module for RF silicon technology” Electron Devices, IEEE Transactions on , Volume: 48 Issue:
8 , Aug. 2001 ,Page(s): 1756 -1764
[10] A. L. Caviglia, R. C. Potter, and L. J. West, “Microwave performance of SOI n-MOSFET’s and Coplanar waveguides” IEEE Electon Device Lett., vol. 12, pp 26-27, Jan 1991.
[11] C.-M. Nam, and Y.-S. Kwon, “Coplanar waveguides on silicon substrate with thick oxidized porous (OPS) layer” IEEE Mircrowave and Guded
Wave Letters, vol.8 no. 11, pp.369-371.
[12] A. Polyakov, P. M. Mendes, S. M. Sinaga, M. Bartek, B. Rejaei, J. N. Correia, J. N. Burghartz. “Processability and electrical characteristics of gass substrates for RF wafer-level chip-scale packages” Electronic Component and Technology Conference, 2003 Proceedings. 53rd, May 27-30, 2003, page(s) 875-880.
[13] R. L. Peterson, and R. F. Drayton, “Dielectric properties of oxidized porous silicon in low resistivity substrate” Microwave Symposium Digest,
2001 IEEE MTT_S International, vol 2, 2001.
[14] D. R. Turner, “Electropolishing silicon in in HF acid solutions” J.
[15] M. I. J. Beale, J.D. Benjamin, M. J. Uren, N. G. Chew , and A. G. Cullis “ An experimental and theoretical study of the formation and microstructure of porous silicon” J. Cryst. Growt 73, 622 (1985)
[16] C. Pickering, M. I. J. Beale, D.J. Robbins, P. J. Pearson and R. Greef, “Optical studies of porous Silicon formed by degenerate and non degenerate silicon” J. Phys. C 17 6535 (1984)
[17] M. I. J. Beale,J.D. Benjamin, M. J. Uren, N. G. Chew , and A. G. Cullis,
Appl. Phys. Lett. 46.86 (1985)
[18] J. J. Theunissen, “Etch channel formation during anodic dissolution of n-Type silicon in acqueos hydrofluoric acid”, J. Electrochem. Soc. 119 351 (1972)
[19] M. J. J. Theunissen, J. A. Appels, and W. H. C. G. Verkuylen, “Application of preferential electrochemical etching of silicon to semiconductor device technology” J. Electochem. Soc. 117, 959-965 (1970)
[20] R. L. Smith, S.-F. Chuang, and S. D. Collins, Sensor and Actuators A 23, 825-829 (1990).
[21] V. Lehmann and H. Foll, J. Electrochem. Soc. 137, 653 (1990). [22] V. Lehmann and H. Foll, J. Electrochem. Soc. 135, 2831 (1988).
[25] I. Ronga, A. Bsiesy, F. Gaspard, R. Herino, M. Ligeon, F. Muller, and A. Halimaoui, J. Electrochem 138, 1403 (1991).
[26] R. L. Smith, S.-F. Chuang, and S. D. Collins, J. Electon. Mater. 17, 533 (1988).
[27] V. Lehmann, U. Gosele “Porous silicon formation: a quantum wire effect”
Appl. Phys. Lett. ,58 (1991), pp. 856-858
[28] H. Foll, V.Lehmann , European Patent EP0400387B1 (1990). [29]E. Yablonovitch et al. Phys Rev. Lett. 57 (1986) 249
[30] J Carstensen, W. Lippik et al Semiconductor Silicon/1994 (ECS Proc.
Vol. 94-10),San Francisco,1994, p. 1105
[31] H. Foll J. Appl. Phys. 53A (1991) 8.
[32] G. Mende, E. Hensel, Thin Solid Films 168 (1989) 51.
[33] G. Hasse, J. Carstensen, H. Foll, inç P. Schmuki, D.J. Lockwood, Y. H. Ogata, H.S. Isaacs (Eds.) , ECS Proceedings,2001, submitted for pubblication.
[34] S. Ronnebeck, J. Carstensen, S. Ottow, H Foll, Electrochem. Solid State
Lett. 2 (1999) 126.
[35] M. M. Dubinin, “The potential theory of adsorption of gases and vapors for adsorbents with energetically non uniform surfaces”, Chem. Rev.,60,p 232-241
[36] L. T. Canham “Pore type, shape, size, volume and surface area in porous silicon” IEEE, London (1997) pp. 83-88.
[37] R. L. Smith and S. D. Collins “Generalized model for the diffusion-limited aggregation and Eden models of cluster growth”, Phys. Rev, A39, 1989, pp. 5409-5413.
[38] T. A. Witten and L. M. Sander, “Diffusion-limited aggregation”, Phys.
Rev. Lett., B27 1983, pp.3165-3167.
[39] T. A. Witten and L. M. Sander, “Diffusion-limited aggregation,a kinetic phenomenon”, Phys. Rev. Lett., 47 1981, pp.1400-1403.
[40] R. L. Smith and S. D. Collins “Porous silicon formation mechanism” J.
Appl. Phys. 71 (1992) R1.
[41] V. Lehmann, U. Gosele “Porous silicon formation: a quantum wire effect”
Appl. Phys. Lett. ,58 (1991), pp. 856-858.
[42] V. Lehmann, et al. Solid State Technol. 38 (1995) 99.
[43] L.Wang, A.Nichelatti, P.M.Sarro, “High aspect ratio through-wafer interconnections for 3D-Microsystems”, 16th Annual IEEE International Micro Electro Mechanical Systems Conference, Kyoto (2003).
[44] H.Ohji, S. Lahtennmak and P.J.French, “Macroporous silicon formation for micromachining”, Proceedings SPIE, Micromachining and
[45] H.Ohji, P. T. J. Gennissen, P. J. French and K. Tsusumi, “Fabrication of a beam-mass structure using single-step electrochemical etching for microstructures (SEEMS)”, J. Micromech.Microeng,10,(2000),pp. 440-444.
[46] V. Lehmann “Porous silicon, a new material for MEMS”, IEEE
Proceedings (1996), pp 1-2
[47] R.Memming and G.Schwandt, “Anodic dissolution of silicon in HF solution”, Surf. Sci., 4, 1996, pp. 109-124.
[48] J. E. A. M van den Meerakker, R. J. G. Elfrink, F. Roozeboom and J. F. C. M Verhoeven “Etch of deep macropores in 6 in. Si wafer”, J. Elect.
S.,147, (2000) pp. 2757-2761.
[49] A. Satoh “Mechanism and characteristics of through-hole formation on Si wafer by optical excitation electropolishing method”, J.Appl.Phys., 39 (2000), pp.1612 –1621.
[50] U. Grunding, V. Lehmann and C. M. Engelhardt, “Two-dimensional infrared photonic band gap structure based on porous silicon”, Appl. Phys.
Lett., 66, 1995, pp.3254-3256.
[51] A Birner, A.P. Li, F. Muller, U. Rosele,P. Kramper, V. Sandoghdar J. Mlynek, K. Busch and Lehmann, “Trasmission of microcavity structure in a two-dimensional photonic crystal based on macroporous silicon”, Material Science in Semiconductor Processing, 3, 2000, pp. 487-479. [52] S. Rowson, A. Chelnokov and J. –M. Lourtioz “two-dimensional photonic
telecommunication waveglengths (1.3-1.5 µ )” J. Lightwave Tech., 17, m 1999. pp.1989-1995.
[53] S. Ottow, V Lehmann and H. Foll, “Processing of three-dimensional microstuctures using macroporous n-type silicon”, J Electochem. Soc., 143,1996, pp.385-390.
[54] J. Schilling, F. Muller,S. Matthias,R. B. Wehrspohn and U. Gosele “three-dimensional photonic crystal based on macroporous silicon with modulate pore diameter”, Appl Phys. Lett. 78, 2001, pp. 1180-1182.
[55] V. Lehmann, R. Stengl, H. Reisinger, R. Detempele, W. Theiss, Appl.
Phys. Lett. 78 (2001) 589.
[56] V Lehman, S. Ronnebeck, Sens. Actuators A 95 (2001) .
[57] C. Kettner, P. Reimann, P. Hanggi, F. Muller, Phys. Rev. E 61 (2000) 212. [58] F. Muller, A. Birner, U. Gosele, J. Schilling, C. Kettler, P. Hanggi Phys
Stat. Sol. (a) 182 (2000) 29.
[59] H. Ohji, S. Izuo, P.J. French and K. Tsutsumi, “fabrication of a DNA chip using macroporous silicon micromachining”, Proceedings SeSens 2001 Veldhoven, The Netherlands, 30 November 2001, pp. 843-847.
[60] R. Angelucci, A.Poggi, L. Dori, A. Tagliani, G. C. Cardinali F. Corticelli, M. Madisaldi, J. Porous Mater. 7 (2000) 197
[62] M. Liponski, P.Panek, S. Bastide, C. Levy-Clement, Phys. Stat. Sol. (a), 2002.
[63] E. A. Ponomarev, C. Levy-Clement, J. Porous Mater 7 (2000) 51.
[64] H. Foll, J. Grabmaier, V. Lehmann, German Patent DE 3324232 C2 (1983).
[65] G. Barillaro, A. Nannini and F. Pieri “Dimensional Constraints on high aspect rato silicon microstructures fabricated by HF photoelectrochemical etching” J. Elect. Soc. , 149 c180-c185 (2002).
[66] H. Ohji “Macroporous Silicon based micromachining” Thesys work (2002)
[67] H. Ohji, P. J. French, S. Izuo, K. Tsutsumi “Initial pits for electrochemical etching in hydrofluoric acid” Sensor and Actuator 85, (2000) 390-394.
[68] Rianee N. Simons, Coplanar waveguide circuits, John Wiley & Sons, 2001
[69] J. Hinojosa, K. Lmimouni, G. Dambrine, “Fast electomagnetic characterization method of thin planar material using coplanar line up to V- band” Electron. Lett. , vol. 38, NO.8, 2002, pp. 373-374.
[70] J. Hinojosa “S-Parameter broadband measurement on Coplanar and fast extraction of substrate intrinsic properties” IEEE Microwave and
[71] Y. Shih, “Broadband characterization of Conductor-Backed Coplanar Waveguide using accurate on-wafer measurement techniques”,
Microwave Jornal, vol. 34, NO. 4, 1991, pp.95-105.
[72] W. R. Eisenstadt, Y. Eo, “ SParameter-Based IC Interconnect Trasmission Line Characterization” IEEE Trans. Components, Hybrids
and Manufact. Techn., vol. 15, NO. 4,1992, pp 483-489.
[73] G. Hasnain, A. Dienes, and J. R. Whinnery, “Dispersion of picosecond pulses in coplanar transmission line” IEEE Trans. Microwave Theory
Tech., vol. 34, NO. 6, pp. 145-148, April 1997.
[74] C. P. Wen, “ Coplanar waveguide: A surface strip transmission line suitable for non reciprocal gyromagnetic device applications” IEEE
Trans. Microwave Theory Tech., vol 17, NO 12, pp. 1087-1090, Dec
1969.
[75] S. S. Bedair and I. Wolff, “Fast, accurate and simple approximate analysis formulas for calculating the parameters of supported coplanar waveguide for (M)MIC’s,” IEEE Trans. Microwave Theory Tech., vol. 40, NO. 1, pp. 41-48, Jan 1992.
[76] R. H. Jansen, “Hybrid Mode Analysis of end effect of planar microwave and millimeterwave transmission line” Proc. IEE, vol. 128, Pt. H, No. 2, pp. 77-86 April 1986.
