n-domain n-domain B
drain contact source contact
x
1 x2oxide
p-domain gate contact
bulk contact
E F
H G
C D
A
e
1P
1e
2e
3P
P
3
2
e e
e
1 3
2
r
i
e e
e
k j
C d
kr r
r
x
ix
jx
kx l
ie
il
je
jl
ke
k0 0.2 0.4
0.6 0.8
1
0 0.2 0.4 0.6 0.8 1 0 0.2 0.4 0.6 0.8 1
0 0.2
0.4 0.6
0.8 1
0 0.2 0.4 0.6 0.8 1 0 0.2 0.4 0.6 0.8 1
10−3 10−2 10−1 100 10−3
10−2 10−1
p=1
10−3 10−2 10−1 100
10−4 10−3 10−2 10−1
p=2
10−3 10−2 10−1 100
10−1 100 101
p=1
10−3 10−2 10−1 100
10−1 100 101
p=1
10−3 10−2 10−1 100 10−3
10−2 10−1
p=1
10−3 10−2 10−1 100
10−4 10−3 10−2 10−1 100
p=2
10−3 10−2 10−1 100
101 102 103
p=1
10−3 10−2 10−1 100
102 103 104
p=1
(1,0)
(1,1) (0,0)
D
A
C
E B
F
(0,0)
(1,0)
(1,1)
(0,0)
(1,0)
(1,1)
0 1 0
1
0 1
0 1
(0,1) (0,0)
(1,1)
P
N
0 0.1 0.2 0.3 0.4 0.5 0.6 1015
1016 1017 1018
Position in µm
Doping concentration in cm−3
0 0.1 0.2 0.3 0.4 0.5 0.6 0
500 1000 1500 2000 2500
Position in µm
Electron temperature in K
= 0 = 0.5/eV
0 0.1 0.2 0.3 0.4 0.5 0.6
0 5 10 15x 106
Position in µm
Electron mean velocity in cm/s
= 0 = 0.5/eV
n p
1.0×102 1.0×104 1.0×106 1.0×108 1.0×1010 1.0×1012 1.0×1014 1.0×1016 1.0×1018
0 0.0001
Tn Tp
3.0×102 1.0×104 1.6×104
0 0.0001
+
S D
B G oxide n
p
n
p
+ +
S
D
G
B
1e+16 1e+17 1e+18 1e+19 1e+20
1.0×1015 1.0×1016 1.0×1017 1.0×1018 1.0×1019 1.0×1020 1.0×1021 1.0×1022
0 0.0001 0.0002
0
0.0001 0.0002
S D G
B
1.0×104 1.0×106 1.0×108 1.0×1010 1.0×1012 1.0×1014 1.0×1016 1.0×1018 1.0×1020 1.0×1022
0 0.0001 0.0002
0 0.0001 0.0002
S D
G
B
0.0×100 1.0×105 2.0×105 3.0×105 4.0×105
0 0.0001
0.0002 0
0.0001 0.0002
S
D G
B
300 1000 2000 3000 4000 4711
0 0.0001
0.0002 0
0.0001 0.0002
S
D G
B
300 1000 1722
0 0.0001
0.0002 0
0.0001
0.0002